igc10 9 t120 t6rh edited by in fineon technologies , aim pmd d cid cls , l7742 a , edition 1 , 31 . 10 .200 7 igbt4 high power chip this chip is used for: medium / high power module s features : 1200v trench + field s top technology low v ce(sat) soft turn off positive temperature coefficient easy paralleling applications: medium / high power drives g c e ch ip type v ce i cn die size package igc10 9 t120t6 r h 1200v 11 0 a 7.48 x 14.61 mm 2 sawn on foil mechanical parameter raster size 7.48 x 14.61 emitter pad size (incl. gate pad) 4 x (2.761 x 6.458) gate pad size 0.811 x 1.31 area total / active 109.3 / 82.6 mm 2 thickness 14 0 m wafer size 150 mm flat po sition 9 0 gr d max.possible chips per wafer 126 passivation frontside photoimide pad metal 3200 nm alsicu backside metal ni ag ? system suitable for epoxy and soft solder die bonding die bond e lectr ically conductive glue or solder wire bond al, <500m reject ink dot s ize ? 0.65mm ; max 1.2mm recommended storage e nvironment s tore in original container, in dry nitrogen, < 6 month at an ambient temperature of 23c
igc10 9 t120 t6rh edited by in fineon technologies , aim pmd d cid cls , l7742 a , edition 1 , 31 . 10 .200 7 maximum ratings parameter symbol value unit collector - e mitter voltage , t j =25 c v ce 1200 v dc collector current, limited by t jmax i c 1 ) a pulsed collector current, t p limited by t jmax i cpuls 33 0 a gate - e mitter voltage v ge 20 v operating junction temperature t j - 40 ... +175 c short circuit data 2 ) v ge = 15v, v cc = 8 00v, tvj = 150c tp 10 s reverse bias safe operating area 2 ) (rbsoa) i c max = 2 2 0 a, v ce max = 1200v, tvj max = 150c 1 ) depending on thermal properties of assembly 2 ) not subject to producti on test - verified by design/characterization static characteristics (tested on wafer ) , t j =25 c value parameter symbol conditions min. typ. max. unit collector - e mitter breakdown voltage v (br)ces v ge =0v , i c = 4.1 ma 1200 collector - e mitter saturation voltage v ce(sat) v ge =15v, i c =11 0 a 1. 5 1. 7 2. 0 gate - e mitter threshold voltage v ge(th) i c = 4.1 ma , v ge =v ce 5.0 5.8 6.5 v zero gate voltage collector current i ces v ce =1200v , v ge =0v 1 4 a gate - e mitter leakage current i ges v ce =0v , v ge =2 0v 600 na integrated gate resistor r gint 7.5 w electrical characteristics ( not subject to production test - verified by design/characterization ) value parameter symbol conditions min. typ. max. unit input capacitance c iss 6800 output capacitance c oss 4 40 reverse transfer capacitance c rss v ce =25v , v ge =0v, f=1mhz 37 5 pf
igc10 9 t120 t6rh edited by in fineon technologies , aim pmd d cid cls , l7742 a , edition 1 , 31 . 10 .200 7 switching characteristics i nductive l oad ( not subject to production test - verified by design /characterization ) val ue parameter symbol conditions 1) min. typ. max. unit turn - on delay time t d(on) tbd rise time t r tbd turn - off delay time t d(off) tbd fall time t f t j =125 c v cc =600v, i c =11 0 a, v ge = - 15/15v, r g = --- w tbd ns 1) values also influenced by parasitic l - and c - in measurem ent and package.
igc10 9 t120 t6rh edited by in fineon technologies , aim pmd d cid cls , l7742 a , edition 1 , 31 . 10 .200 7 chip drawing
igc10 9 t120 t6rh edited by in fineon technologies , aim pmd d cid cls , l7742 a , edition 1 , 31 . 10 .200 7 fur ther electrical characteristics this chip data sheet refers to the device data sheet tbd description aql 0,65 for visual inspection according to failure catalog ue electrostatic discharge sensitive device acco rding to mil - std 883 test - normen villach/prffeld published by infineon technologies ag 81726 munich, germany ? infineon technologies ag 2007 all rights reserved attention please! the information herein is given to describe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non - infringement, regarding circuits, descriptions and c harts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon te chnologies representatives world - wide (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon techno logies components may only be used in life - support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life - support device or system, or to a ffect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and / or maintain and sustain and / or protect human life. if they fail, it is reasonable to assum e that the health of the user or other persons may be endangered.
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